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- Article name
- Efficiency of solar energy conversion by Si solar cell with Ge quantum dots
- Authors
- Voitsekhovskii A. V., , vav@elefot.tsu.ru, TSU, 36 Lenin av., Tomsk, 634050, Russia
Grigor'ev D. V., , vav@elefot.tsu.ru, Siberian Physical-Technical Institute, 1 Novosobornaya str., Tomsk, 634050, Russia
Pcheljakov O. P., , , Institute of Semiconductors Physics, 13 Lavrent'ev av., Novosibirsk, 603090, Russia
Nikiforov A. I., , , Institute of Semiconductors Physics, 13 Lavrent'ev av., Novosibirsk, 603090, Russia
- Keywords
- sun element / quantum point / photocurrent / efficiency
- Year
- 2010 Issue 2 Pages 96 - 102
- Code EDN
- Code DOI
- Abstract
- The model of the solar cell on basis p+-i-n+ Si-structure witch include the layers with Ge quantum dots in i-area is considered. For definition of the solar cell conversion efficiency the calculation of the p+-i-n+ structure photocurrent was carried out. As a result of calculation the estimation of a quantum dot effect on efficiency of photoconverter are received.
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