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- Article name
- Properties of films boron nitride received by a method of high-frequency magnetron raising dust
- Authors
- BATYUNYA L. P., , , Moscow State Institute of Electronic Devices (Technical University), Russia
SOKOLOV E. B., , , The Moscow State Institute of Electronic Devices (The Technical University), Moscow, Russia
- Keywords
- Year
- 2006 Issue 2 Pages 60 - 64
- Code EDN
- Code DOI
- Abstract
- The development of technology of obtaining of films BN by a method of high-frequency magnetron raising dust is conducted. Electrophysical properties and structure of films are investigated. The Possibility of obtaining optically transparent films BN having mechanicly strong diamondlike structure is established. Received films BN can be recommended as protective covers for different designs, including the multilayer film structures used in electronic devices as well as in the elements of electronic products.
- Text
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