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- Article name
- Using of polycrystalline diamond layers to create sensitive element of high-temperature pressure sensors
- Authors
- VISOTINA E. A., , evysotina@gmail.com, Keldysh Research Center, NITU "MISIS", Moscow, Russia
RIZAKHANOV R. N., , nanocentre@kerc.msk.ru, Keldysh Research Center, Moscow, Russia
SIGALAEV S. K., , nanocentre@kerc.msk.ru, Keldysh Research Center, Moscow, Russia
POLUSHIN N. I., , polushin@misis.ru, NITU "MISIS", Moscow, Russia
SPITSYN B. V., , bvspitsyn@gmail.com, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Moscow, Russia
ALEXENKO A. E., , bvspitsyn@gmail.com, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Moscow, Russia
VOLKOV V. S., , distorsion@rambler.ru, Joint-Stock Company "AO "NIIFI", Moscow, Russia
- Keywords
- pressure sensor / sensitive element / polycrystalline diamond / strain gauge / MEMS structure / silicon carbide / silicon-on-dielectric / wide-gap semiconductor / doping by boron
- Year
- 2020 Issue 3 Pages 54 - 61
- Code EDN
- Code DOI
- Abstract
- The properties of structures based on wide-gap semiconductor materials were analyzed. The design and manufacturing technology of the sensitive element of the pressure sensor based on polycrystalline diamond was considered in detail. The proposed design of the pressure sensor is operable in the pressure range from 0.1 to 10 MPa and in the temperature range from -60 to 400 °C.
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