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- Article name
- POWERful TS-LDMOS TRANSISTORS WITH TRENCHED-TYPE SUBSTRATE CONTACT WITH OPERATING FREQUENCIES 2 GHz
- Authors
- Shemyakin A. V., , A.Shemyakin@tcen.ru, SMC "Technological Centre" of MIET, Moscow, Russia
- Keywords
- TS-LDMOS / breakdown voltage / total chip area / trenched-type contact / mathematical modeling / suppress coupling between inductors / TCAD simulation
- Year
- 2011 Issue 4 Pages 23 - 29
- Code EDN
- Code DOI
- Abstract
- The possibility of substantial miniaturization of the LDMOS-transistor structure without any degradation of its electrical parameters is discussed. Also was investigated the introduction of structural and technological solutions concerning optimization P+ Sinker, which acts as a deep substrate contact. Total chip area of TS-LDMOS-transistor reduced less than 40 % compared to conventional LDMOS.
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