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- Article name
- SRAM CELL RESISTANT TO EXTERNAL FACTORS
- Authors
- Fedorov R. A., , R.Fedorov@tcen.ru, SMC Technological Centre of Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
Malashevich N. I., , N.Malashevich@gmail.com, SMC Technological Centre of Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
- Keywords
- SRAM / memory cell
- Year
- 2011 Issue 4 Pages 29 - 33
- Code EDN
- Code DOI
- Abstract
- The RAM cell resistant to external factors, developed at the Technological Centre of MIET is considered. The block diagram of the cell and the simulation results of work are given. Advantages and disadvantages of the developed cell in comparison with a classical six-transistor cell are specified.
- Text
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