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- Article name
- Diffusion of sulphur from the InP substrate of the InGaAs/InP heteroepitaxial structure at pin-photodiodes creating
- Authors
- Gorlachuk P. V., , , Stelmakh Research Institute "Polyus", 3 Vvedenskogo str., Moscow, 117342, Russia
Marmalyuk A. A., , A.Marmalyuk@siplus.ru, Stelmakh Research Institute "Polyus", 3 Vvedenskogo str., Moscow, 117342, Russia
Ryaboshtan Yu. L., , , Stelmakh Research Institute "Polyus", 3 Vvedenskogo str., Moscow, 117342, Russia
Sarayikin V. V., , info@ckp.su, Lukin Research Institute of Physical Problems, 5 4-th West Passage, Moscow, Zelenograd, 124460, Russia
Khakuashev P. E., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Chinareva I. B., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
- Keywords
- heteroepitaxial structures / diffusion / profile / concentration / employme
- Year
- 2012 Issue 5 Pages 77 - 80
- Code EDN
- Code DOI
- Abstract
- InGaAs/InP pin-photodiodes increases capacity causes are investigated. It is concluded that sulphur diffusion from the InP substrate is responsible for this effect in the InGaAs layer.
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