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- Article name
- Photodiodes from indium antimonide with Moss-Burshtein effect on basis of liquid-phase homoepitaxial structures
- Authors
- Astakhov V. P., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Karpov V. V., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Karpukhin V. V., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Chishko V. F., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Shlyonsky A. A., , ko-ckb@mail.ru, Giredmet, 5 Big Tolmachev al., 119017, Moscow, Russia
- Keywords
- photodiod / indium antimonide / bar / film / epitaxy
- Year
- 2012 Issue 4 Pages 79 - 82
- Code EDN
- Code DOI
- Abstract
- Photodiodes from indium antimonide with Moss-Burshtein effect on basis of liquid-phase homoepitaxial structures are created and investigated. It is shown that such photodiodes can be applied at irradiation of the emitter (p+-layer) - side and substrate - side.
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