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- Article name
- Radiation effects in the TlGaSe2 single crystals
- Authors
- Mustafaeva S. N., , solmust@gmail.com, Institute of Physics, National Academy of Sciences of Azerbaijan, 33 G. Javid ave., Baku, AZ 1143, Azerbaijan
Asadov M. M., , mirasadov@gmail.com, Institute of Chemical Problems, National Academy of Sciences of Azerbaijan, 29 G. Javid ave., Baku, AZ 1143, Azerbaijan
Ismailov A. A., , , Institute of Physics, National Academy of Sciences of Azerbaijan, 33 G. Javid ave., Baku, AZ 1143, Azerbaijan
- Keywords
- single crystal / TlGaSe2 / gamma irradiation / ac-conductivity / dielectric permittivity / frequency dispersion / hop distance / localized states / dielectric loss
- Year
- 2012 Issue 3 Pages 19 - 23
- Code EDN
- Code DOI
- Abstract
- The influence of gamma irradiation on the dielectric properties and ac-conductivity across layers of theTlGaSe2 single crystals has been investigated in the frequency range from 5⋅104 up to 3.5⋅107 Hz. It has been shown that gamma irradiation of TlGaSe2 single crystals with a dose of 3⋅104 and 2.25⋅106 rad leads to decrease in the dielectric permittivity and changes the nature of the dielectric loss. The hopping conduction through localized states near the Fermi level has been established. The Fermi level densities of states, the spread of their energies, and the mean hop time and distance have been estimated.
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