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- Article name
- Spectral response investigation of MCT photodiodes on the base of heteroepitaxial structures
- Authors
- Yakovleva N. I., , orion@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts highway, Moscow, 111123, Russia
Boltar K. O., , orion@orion-ir.ru, Orion Research-and-Production Association, 9 Kosinskaya str., Moscow, 111402, Russia
Nikonov A. V., , orion@orion-ir.ru, Orion Research-and-Production Association, 9 Kosinskaya str., Moscow, 111402, Russia
- Keywords
- heteroepitaxial structures / FPA / spectral sensitivity / quantum efficiency
- Year
- 2012 Issue 3 Pages 70 - 78
- Code EDN
- Code DOI
- Abstract
- Spectral responses of photodiodes formed in MCT heteroepitaxial structures have been simulated. The back-side illuminated n+-p-diodes were fabricated on an extrinsic-doped p-type HgCdTe liquid-phase epitaxy (LPE) or molecular beam epitaxy (MBE) layers. One-dimensional models of the p-n-junction with short and long bases have been used to calculate the quantum efficiency. The transmission of incident radiation through optical antireflection coats, epitaxial layers, and the substrate were taken into account. Spectral response numerical simulation allows to determine an epilayers widths, composition, the diffusion length of minority charge carriers, the surface recombination on MCT epilayer interface, and evaluate the photoelectric crosstalk between neighbouring FPA photodiodes.
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