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- Article name
- Low-barrier Schottky detector diode of silicon structures doped with antimony
- Authors
- Zakamov V. R., , zvr@ipm.sci-nnov.ru, IPM RAS, GSP-105, Nizhny Novgorod, 603950, Russia
Chechenin Yu. I., , , FSUP Salut, 7 Larina, 7str., Nizhny Novgorod, 603950, Russia
- Keywords
- detector diodes / low barier Schottky diodes
- Year
- 2012 Issue 3 Pages 101 - 105
- Code EDN
- Code DOI
- Abstract
- The possibility of obtaining low barier Schottky contacts on n type silicon by growing by molecular beam epitaxy of heavily doped surface layer (thickness about 4 nm). Obtained ohmic contacts and low barier contacts with differential resistance 1-2 kОm. Tested method of partial etching of high-alloyed surface layer by argon ions for the Schottky barrier. Measured the capacity low barier contacts and response to external RF signal.
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