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- Article name
- Isoperiodic photosensitive Pb1-xSnxSе/PbSе1-хSхheterostructures
- Authors
- Nuriyev I. R., , , Institute of Physics of the NAS of Azerbaijan, 33 H. Javid av., Baku, AZ1143, Azerbaijan
Faradzhev N. V., , , Institute of Physics of the NAS of Azerbaijan, 33 H. Javid av., Baku, AZ1143, Azerbaijan
Nazarov A. M., , afin@aport2000.ru, Institute of Physics of the NAS of Azerbaijan, 33 H. Javid av., Baku, AZ1143, Azerbaijan
Gadzhiev M. B., , , Institute of Physics of the NAS of Azerbaijan, 33 H. Javid av., Baku, AZ1143, Azerbaijan
- Keywords
- hetero-junction / epitaxial layer / photosensitive element
- Year
- 2012 Issue 1 Pages 98 - 100
- Code EDN
- Code DOI
- Abstract
- In the present paper, peculiarities of creation of the isoperiodic p-Pb1-хSnхSе (х = 0.03)/n-PbSе1-хSх (х = 0.05) hetero-junctions and manufacturing the photosensitive elements suitable for application have been considered. Photosensitive elements with high technical parameters: R0A = 1.2-1.5 Ω×сm2; λmax= 8 μm; = (1-2)⋅1010 cm×Hs1/2×W-1, which are comparable with the similar parameters obtained for Shottky diodes on the basis Pb1-хSnхSe, have been made.
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