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- Article name
- Calculation of photoelectric characteristics of the 2.0-3.5 μm FPA on basis of the InAs photodiodes
- Authors
- Astakhov V. P., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Karpov V. V., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Chishko V. F., , ko-ckb@mail.ru, Moscow Plant Sapfir, 4a Dnepropetrovsky av., Moscow, 117345, Russia
Artamonov A. V., , ko-ckb@mail.ru, Moscovskiy Zavod "Sapfir", 4а Dnepropetovsk av., Moscow, 117545, Russia
Levshin V. L., , , Geofizika-Cosmos R&P Plant, Moscow, Russia
- Keywords
- calculation / focal plane array / format / detectivity / threshold power
- Year
- 2011 Issue 6 Pages 145 - 148
- Code EDN
- Code DOI
- Abstract
- Calculation of photoelectric characteristics of the 2.0-3.5 μm FPA on basis of the InAs photodiodes has been made. The hypothetical FPA has the 640х512 format and 20х20 μm elements.
- Text
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