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- Article name
- Features of the band bending on the surface of graded gap Hg1-xCdxTe
- Authors
- Predein A. V., , alpred@thermo.isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrentyev av., Novosibirsk, 630090, Russia
Vasilyev V. V., , alpred@thermo.isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrentyev av., Novosibirsk, 630090, Russia
- Keywords
- graded gap layer / HgCdTe / C-V curve / band diagram / numerical computations
- Year
- 2011 Issue 5 Pages 41 - 47
- Code EDN
- Code DOI
- Abstract
- Computations were performed of potential distribution in the surface graded gap layer of p-type HgCdTe. The Poisson equation was solved as non-linear integral-differential equation taking into account the nonparabolicity of conduction band. The energy band diagrams were constructed for various doping level, graded gap region width and surface potential. The MIS structure characteristics were computed and the conditions of inversion layer formation in planar n on p diodes, based on graded gap р-HgCdTe, were determined.
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