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- Article name
- Сalculation of capacitance-voltage characteristics for the MIS-structures based on heteroepitaxial HgCdTe MBE with near-surface graded-gap layers with elevated composition
- Authors
- Burlakov I. D., , IDBUR@orion-ir.ru, Orion R&P Association, 46/2 Enthusiasts road, Moscow, 111123, Russia
Voitsekhovskii A. V., , vav@elefot.tsu.ru, TSU, 36 Lenin av., Tomsk, 634050, Russia
Nesmelov S. N., , , ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Dzyadukh S. M., , , ASD "SPTI TSU", 1 Novosobornaya str., Tomsk, 634050, Russia
Selyakov A. Yu., , ayusel@mail.ru, Orion R&D Association, 46/2, Enthuziastov shosse, Moscow, 111123, Russia
- Keywords
- MIS-structure / mercury cadmium telluride / molecular-beam epitaxy / capacitance-voltage characteristic
- Year
- 2011 Issue 5 Pages 80 - 86
- Code EDN
- Code DOI
- Abstract
- The capacitance-voltage characteristics of MIS-structures based on epitaxial n-Hg0.77Cd0.23Te taking into account the degeneracy and non-parabolicity at various approximations of values of integrals of the Fermi-Dirac were calculated. The capacitance of tunneling via a trap for the MIS-structures based on n-Hg0.775Cd0.225Te was estimate. As a result of the numerical solution of Poisson's equation constructed of capacitance-voltage characteristics of MIS-structures based on HgCdTe with near-surface graded-gap layer. It is shown that the account of presence of graded-gap layer is necessary for correct interpretation of experimental data.
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