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- Article name
- Effect of the γ-irradiation on the electrical and photovoltaic properties of heterojunction p-TlInSe2/n-TlSe <Ge>
- Authors
- Abasova A. Z., , msrahim@mail.ru, Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, 9. F. Agaeva str., Baku, AZ1143, Republic of Azerbaijan
Madatov R. S., , msrahim@mail.ru, Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, 9. F. Agaeva str., Baku, AZ1143, Republic of Azerbaijan
Nadjafov A. I., , msrahim@mail.ru, Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, 9. F. Agaeva str., Baku, AZ1143, Republic of Azerbaijan
Gazanfarov M. R., , msrahim@mail.ru, Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, 9. F. Agaeva str., Baku, AZ1143, Republic of Azerbaijan
- Keywords
- heterojunction / generation / current / radiation defect / photocurrent / resistance
- Year
- 2011 Issue 5 Pages 112 - 117
- Code EDN
- Code DOI
- Abstract
- The effect of γ-irradiation on the current transport mechanism in the p-TlInSe2/n-TlSe<Ge> heterostructures is studied. It has been revealed that the interaction of radiation defects with the initial defects of crystals brings in the reconstruction and redistribution of defects at the edge of heterojunction separation. This results leds to an insignificant change of hetero-recombination processes in the current transport mechanism. Abnormal dose dependence of the heterojunction characteristics is explained by a level compensation rate at the edge of separation and in the structure base.
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