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- Article name
- Current state and new prospects of the semiconductor infrared photoelectronics
- Authors
- Korneeva M. D., , orion@orion-ir.ru, Orion R&P Association, 9 Kosinskaya str., Moscow, 111402, Russia
Filachev A. M., , orion@orion-ir.ru, Orion Research-and-Production Association, 9 Kosinskaya str., Moscow, 111402, Russia
Ponomarenko V. P., , orion@orion-ir.ru, Orion R&P Association; MIPT, 9 Kosinskaya str., Moscow, 111402, Russia; 9 Institute al., Dolgoprudny, Moscow region, 141700, Russia
- Keywords
- photoelectronics / thermal vision / multispectral / InSb / solid solution / detectivity / array / fast-acting
- Year
- 2011 Issue 3 Pages 82 - 90
- Code EDN
- Code DOI
- Abstract
- The paper discusses condition and results of development in a number of basic technologies of infrared photoelectronics: semiconductor photosensitive materials, solid-state photo converters for IR and UV regions of the electromagnetic radiation, multispectral and fast response devices, THz radiation recording devices, metamaterials and nanotechnology for creation of new types of optoelectronic devices. The paper discusses the results of development of staring and TDA focal plane arrays based on Cd02Hg08Te and InSb for spectral regions 8-12, 3-5, 1-2 µm with 2×96, 2×256, 4×288, 2×(2×288), 6×576, 256×256, 384×288 formats, digital imaging systems, and also imaging modules on their basis.
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