To obtain access to full text of journal and articles you must register!
- Article name
- Photodetector with guided wavelength characteristics on the basis of the n-ZnS-n-GaAs heterostructure
- Authors
- Suslyakov Yu. V., , Suslyakov48@mail.ru, Kalmyk State University, 11 Pushkin's str., Elista, Republic Kalmykia, 358000, Russia
Kormiltsev I. V., , , Kalmyk State University, 11 Pushkin's str., Elista, Republic Kalmykia, 358000, Russia
- Keywords
- heteroepitaxial layer / heterostructure / photoelectric properties
- Year
- 2011 Issue 3 Pages 95 - 97
- Code EDN
- Code DOI
- Abstract
- The technology of reception, structural and photo-electric properties of heteroepitaxial layers of such as ZnS on gallium arsenide are considered. It is shown that the spectral characteristics of the isotip n-ZnS-n-GaAs heterostructures have three maxima 750, 450 and 335 nm with lengths of waves. At transition from long-wave area in short-wave area of radiation and back there is a change of a sign on the photoanswer. The spectral characteristics of the n-ZnS-n-GaAs heterostructures depend on a sign and size of the applied volts.
- Text
- BUY for read the full text of article
- Buy
- 100.00 rub
