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- Article name
- ANALYSIS OF PHYSICAL AND CHEMICAL MODELS OF THE GROWTH RATE OF THIN AMORPHOUS SILICON FILMS IN LOW PRESSURE SILANE PLASMA MIXTURES
- Authors
- Evstafyev S. S., , madcatse@gmail.com, Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
TIMOSHENKOV S. P., , spt@miee.ru, National Research University of Electronic Technology, Moscow, Russia
Britkov I. M. , , b_i_m@mail.ru, Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
Britkov O. M. , , b_o_m@inbox.ru, Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
Prokop'ev E. P. , , epprokopiev@mail.ru, Institute for Theoretical and Experimental Physics, Moscow, Russia
- Keywords
- boundary layer theory / the growth model / mathematical model / silane plasma
- Year
- 2011 Issue 1 Pages 73 - 78
- Code EDN
- Code DOI
- Abstract
- One-dimensional models of the growth of amorphous films, based on the model of boundary layer theory, have been proposed to solve the problem of obtaining high quality layers of thin amorphous silicon films on various substrates in high-frequency glow discharge in low pressure silane plasma mixtures. These models helped to define stabilization condition αV of technological parameters, considering allowable variation of amorphous silicon films thickness of 5 %: αV < 1.1 %.
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