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- Article name
- Influence of γ-irradiations on electrophysical parametres of the InGaN/GaN light-emitting diodes
- Authors
- Grushko N. S., , hatabovich@mail.ru, Ulyanovsk State University, 42 Lev Tolstoy str., Ulyanovsk, 432000, Russia
Solonin A. P., , hatabovich@mail.ru, Ulyanovsk State University, 42 Lev Tolstoy str., Ulyanovsk, 432000, Russia
- Keywords
- light-emitting diodes / quantum wells / concentration profile / quantum exit
- Year
- 2011 Issue 1 Pages 92 - 95
- Code EDN
- Code DOI
- Abstract
- The InGaN/AlGaN/GaN LEDs were investigated after γ-irradiation. The influence is established on a concentration profile of a fine impurity and concentration of deep levels. The size of the compensated area and a gradient of concentration are determined. The opportunity of increase of efficiency of LEDs and its brightnesses is revealed.
- Text
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