To obtain access to full text of journal and articles you must register!
- Article name
- Intrinsic oxide of indium selenide under the conditions of water vapor sorption
- Authors
- Drapak S. I., , sdrapak@ukr.net, I. M. Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine
Gavrylyuk S. V., , , Chernivtsi Yuriy Fed'kovych National University, 2 Kotsyubynskii Str., Chernivtsi, 58012, Ukraine
Kovalyuk Z. D., , , I. M. Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine
Lytvyn O. S., , , Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, 03028, Kyiv, Ukraine
- Keywords
- indium selenide / intrinsic oxide / sensors
- Year
- 2011 Issue 1 Pages 115 - 122
- Code EDN
- Code DOI
- Abstract
- On the base of XRD measurements and AFM images it is shown that a long-term keeping of a layered indium monoselenide at room temperature in open air atmosphere results in formation of the intrinsic oxide at a cleaved surface of semiconductor. It is found that the intrinsic oxide on surface of InSe can represent a dielectric matrix (Se2O5) with the inclusions of nanoparticles of pure In or a mixture of In2O3, In(OH)3 и In2(SeO3)3 x 2H2SeO3 х H2O. The possibility to use both types of oxides as active element of humidity sensors is under consideration.
- Text
- BUY for read the full text of article
- Buy
- 100.00 rub
