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- Article name
- LOW-VOLTAGE VLSI CIRCUIT SIMULATION ISSUES
- Authors
- Kurganskiy S. I., , skurg@mail.ru, Voronezh State University, Joint Stock Company «Engineering and design centre "Electronics"», Voronezh, Russia
Bocharova V. V., , vika321.86@mail.ru, Joint Stock Company «Engineering and design centre "Electronics"», Voronezh State University, Voronezh, Russia
- Keywords
- very large scale integrated circuits / computer-aided design systems / CMOS
- Year
- 2010 Issue 4 Pages 51 - 54
- Code EDN
- Code DOI
- Abstract
- The paper deals with the main issues of low-voltage VLSI circuit design with application of CAD software tools. Electronic switch simulation based on n-MOS and CMOS is carried out. MOSFET model which considers such physical phenomena as short and narrow channel effects, channel length modulation, subthreshold conduction, non-uniform doping effect, source/drain parasitic resistances and etc. is used. Simulated results indicate the necessity in usage of CMOS electronic switch in switching circuits when applied to low-voltage VLSI circuits.
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