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- Article name
- Investigation of the MIS structures of the MBE CdхHg1-хTe - anodic oxide
- Authors
- Vasilyev V. V., , vas@thempo.isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Ac. Lavrentyeva av., Novosibirsk, 630090, Russia
Mashukov Yu. P., , vas@thempo.isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Ac. Lavrentyeva av., Novosibirsk, 630090, Russia
- Keywords
- investigation / wide gap layer / pattern / MIS structure
- Year
- 2010 Issue 4 Pages 106 - 110
- Code EDN
- Code DOI
- Abstract
- It is investigated 4 MBE CdxHg1-xTe patterns, having the same composition x = 0.22, but different concentrations of electrons, by that, a part of the patterns had a wide gap graded surface layer. In capacity of a dielectric in the MIS structures the anodic oxide is served. For correction of the experimental measured capacitance-voltage characteristics, with the purpose of the exclusion of the base resistance influence, the suitable procedure is proposed. For one of the patterns the generation resistance of the space charge region of the MIS structure, being in the strong inversion state, is determined.
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