23.12.2014
PRIKLADNAYA FIZIKA
(APPLIED PHYSICS)
THE SCIENTIFIC AND TECHNICAL JOURNAL
No. 6 Founded in 1994 Moscow 2014
C O N T E N T S
GENERAL PHYSICS
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V. M. Kotov Acousto-optic modulation of multi-color radiation with the proportional changing of the light waves intensity |
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5 |
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M. B. Grisheckin, I. А. Denisov, А. А. Silina, N. А. Smirnova, N. I. Shmatov, and А. G. Yakovenko Investigation of structural defects in CdZnTe crystals by the infrared and optical microscopy |
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9 |
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A. V. Romanov, M. A. Stepovich, and M. N. Filippov Using the model for the generation of secondary fluorescence spectra of condensed matter |
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16 |
| N. A. Mammadov, G. I. Garibov, Sh. Sh. Alekberov, and E. A. Rasulov Influence of various external factors on the water surface tension | 20 |
PLASMA PHYSICS AND PLASMA METHODS
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V. V. Andreev Study of impact of dielectric barrier discharge on the silicon-containing film |
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24 |
| V. I. Asiunin, S. G. Davydov, A. N. Dolgov, T. I. Kozlovskaya, A. A. Pshenichniy, and R. Kh. Yakubov Arc discharge plasma dynamic features in inhomogeneous magnetic field | 29 | |
| S. G. Davydov, A. N. Dolgov, T. I. Kozlovskaya, V. O. Revazov, V. P. Seleznev, and R. Kh. Yakubov The commutation process of a vacuum electrical gap in laser plasma | 32 | |
| V. A. Ivanov, M. E. Konyzhev, A. A. Dorofeyuk, T. I. Kamolova, L. I. Kuksenova, V. G. Lapteva, and I. A. Khrennikova Formation of a strong microrelief on the steel–45 surface by microplasma discharges | 38 |
PHOTOELECTRONICS
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N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova The 3х3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes |
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47 |
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I. A. Nikiforov, A. V. Nikonov, K. O. Boltar, and N. I. Iakovleva Temperature dependence of minority carriers diffusion length in MCT |
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52 |
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A. A. Lopukhin, V. E. Stepanyuk, I. I. Taubkin, and V. V. Fadeev Research of infrared light annealing influence on properties the InSb FPA’s structures |
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56 |
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E. D. Korotaev, N. I. Iakovleva, A. E. Mirifianchenko, and A. V. Lialikov Main features of InGaAs/InP heterostructures intended for SWIR highspeed operation applications |
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60 |
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A. A. Lopuhin Influence of the photosensitive layer thickness on InSb FPA properties |
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66 |
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A. L. Sizov, A. E. Mirifianchenko, A. V. Lialikov, and N. I. Iakovleva Сrystallographic analysis of the CdHgTe heteroepitaxial structures |
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70 |
| A. Sh. Abdinov, N. М. Mehtiyev, R. F. Babayeva, and R. M. Rzayev Multifunctional photodetectors based on the n-InSe crystals | 76 |
PHYSICAL APPARATUS AND ITS ELEMENTS
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V. V. Aleksandrov, Y. S. Bychkouski, B. N. Drazhnikov, K. V. Kozlov, I. S. Kondyushin, and A. V. Matveev Universal equipment for measuring the electrical parameters of different electronic devices |
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81 |
| A. D. Deomidov, M. E. Kononov, A. V. Polesskiy, N. A. Semenchenko, K. A. Khamidullin, and S. V. Dobrunov Test equipment for spectral response measurement of ultraviolet focal plane arrays | 87 | |
| D. L. Baliev, E. A. Bedareva, A. D. Deomidov, A. V. Polesskiy, A. V. Sidorin, K. A. Khamidullin, A. D. Yudovskaya, and G. M. Tsygankova The automatic test-bench for measurement of the FPA characteristics based on InGaAs | 93 |
INFORMATION
| Memory of Academician Yu. K. Pojela | 99 | |
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Rules for authors |
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100 |
| Subscription | 102 |
