PRIKLADNAYA FIZIKA
(APPLIED PHYSICS)
THE SCIENTIFIC AND TECHNICAL JOURNAL
No. 4 Founded in 1994 Moscow 2015
C O N T E N T S
GENERAL PHYSICS
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D. А. Vasil’ev, К. А. Vereshchagin, А. К. Vereshchagin, D. А. Spassky, V. O. Sokolov, A. V. Khakhalin, N. V. Vasil’eva, A. M. Galstyan, and V. G. Plotnichenko Influence of Al ions on optical and kinetic properties of (Pb, Gd)3(Al, Ga)5O12:Ce epitaxial films |
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5 |
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R. S. Madatov, A. S. Alekperov, and O. M. Hasanov Change-over and memory effects in the layered GeS monocrystals |
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11 |
| А. N. Polyakov, M. Noltemeyer, T. Hempel, J. Christen, and M. A. Stepovich About the practical implementation of same time-of-flight measurements scheme in cathodoluminescence microscopy | 16 | |
| Y. N. Tashayev Modeling of the electrostatic field of the charged non-conducting torus | 21 |
PLASMA PHYSICS AND PLASMA METHODS
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V. V. Shumova, D. N. Polyakov, and L. M. Vasilyak Transformation of dust structures in a dc discharge in neon |
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27 |
| V. V. Marusin and V. G. Shchukin Influence of frequency of a field on features of plasma treatment of polymers | 33 | |
| A. I. Golovin Influence of gas heating on the voltage-current characteristic of an electron beam generator based on a stationary open discharge | 39 | |
| A. V. Tyunkov, V. A. Burdovitsin, A. V. Kazakov, A. V. Medovnik, and E. M. Oks Mass-to-charge ion composition of arc discharge plasma in a forevacuum wide-aperture electron source | 45 | |
| V. V. Ivonin, A. N. Danilin, B. V. Efimov, V. V. Kolobov, V. N. Selivanov, L. M. Vasilyak, S. P. Vetchinin, V. Ya. Pecherkin, and E. E. Son Optical investigations of spark channels in soil under spreading of pulse current | 50 |
PHOTOELECTRONICS
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А. А. Koronnov, G. M. Zverev, М. М. Zemlyanov, E. V. Zharicova, and D. V. Marsagishvili Characteristics of the germanium avalanche photodiode subjected to a high power laser irradiation |
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54 |
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A. Yu. Selyakov, I. D. Burlakov, and A. M. Filachev Correlator’s properties for thermal and photo-induced stochastic fields of mobile charge carriers concentrations and currents in IR photodiodes |
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59 |
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D. V. Smirnov, K. O. Boltar, M. V. Sednev, and Y. P. Sharonov Research of characteristics mesa structures of the matrixes of p–i–n diodes based on the AlxGa1-xN heteroepitaxial structures |
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66 |
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N. B. Zaletaev, K. O. Boltar, A. A. Lopukhin, I. V. Chinareva, and E. V. Gabbasova Study of the InGaAs planar p–i–n photodiode focal plane array with p–n junctions of reduced sizes |
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71 |
| Y. K. Gruzevich, Y. N. Gordienko, L. M. Balyasnyi, P. S. Alkov, V. Y. Ivanov, A. L. Diatlov, and P. I. Vatcenko Photodetector photocathode with a Schottky barrier based on the InP/InGaAs/InP: Ag structure sensitive up to 1.7 µ | 76 | |
| Y. K. Gruzevich, Y. N. Gordienko, L. M. Balyasnyi, O. V. Chistov, P. S. Alkov, D. A. Shirokov, V. N. Zhmerik, D. V. Nechayev, and S. V. Ivanov Development of the solar-blind range photocathodes based on aluminum gallium nitride heterostructure fabricated by molecular beam epitaxial | 82 | |
| A. A. Kolesova, A. V. Lobachyov, N. A. Solomonova, and K. A. Khamidullin Quality requirements to the windows’ optical surfaces for the non-cooled ultraviolet and infrared photodetectors | 88 |
PHYSICAL APPARATUS AND ITS ELEMENTS
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A. D. Deomidov, A. V. Polesskiy, N. A. Semenchenko, V. C. Tresak, and A. A. Smirnov Using Monte Carlo method for uncertainty analysis of SWIR FPA spectral response measurement |
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94 |
| A. D. Deomidov, K. V. Kozlov, A. V. Polesskiy, N. A. Solomonova, and Yu. A. Firsenkova Impact of the low-frequency noise on measurement accuracy of a signal for photodetectors of the second and third generations | 102 |
INFORMATION
| Three Volumes on Photoelectronics | 109 | |
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Rules for authors |
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111 |