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- Article name
- SIMULATION OF GE<SI, SB> DIRECTED CRYSTALLIZATION PROCESS WITH RESPECT TO SOLUTAL CONVECTION EFFECT
- Authors
- Goncharov V. A., , , ,
Baldina N. A., , , ,
- Keywords
- bridgman technique / crystal growth under microgravity / mathematical simulation / segregation coefficient / solutal convection
- Year
- 2009 Issue 3 Pages 50 - 54
- Code EDN
- Code DOI
- Abstract
- An attempt is made to investigate the influence of the solutal effect on convection in Ge<Si,Sb> melts. Results of a well-known crystal growth experiment under microgravity are analyzed. Simulation for Bridgman technique is based on Stephen problem and Navier-Stokes equations numerical solution. Results of numerical simulation coincide completely with experimental data.
- Text
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